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Exploration of gate trench module for vertical GaN devices

dc.contributor.authorRuzzarin, Maria
dc.contributor.authorGeens, Karen
dc.contributor.authorBorga, Matteo
dc.contributor.authorLiang, Hu
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorNeviani, Andrea
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-29T03:19:45Z
dc.date.available2021-10-29T03:19:45Z
dc.date.issued2020
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35862
dc.sourceIIOimport
dc.titleExploration of gate trench module for vertical GaN devices
dc.typeJournal article
dc.contributor.imecauthorRuzzarin, Maria
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage113828
dc.source.journalMicroelectronics Reliability
dc.source.volume114
dc.identifier.urlhttps://doi.org/10.1016/j.microrel.2020.113828
imec.availabilityPublished - imec
imec.internalnotes31st European Symposium on Reliability of Electron Devices (ESREF), October 2020


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