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Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation

dc.contributor.authorSchoenaers, Ben
dc.contributor.authorLeonhardt, Alessandra
dc.contributor.authorNalin Mehta, Ankit
dc.contributor.authorStesmans, Andre
dc.contributor.authorChiappe, Daniele
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorRadu, Iuliana
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHoussa, Michel
dc.contributor.authorAfanas'ev, Valeri V.
dc.date.accessioned2021-10-29T03:48:35Z
dc.date.available2021-10-29T03:48:35Z
dc.date.issued2020
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35912
dc.sourceIIOimport
dc.titleAnalysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation
dc.typeJournal article
dc.contributor.imecauthorSchoenaers, Ben
dc.contributor.imecauthorLeonhardt, Alessandra
dc.contributor.imecauthorNalin Mehta, Ankit
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecNalin Mehta, Ankit::0000-0002-2169-940X
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage93001
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue9
dc.source.volume9
dc.identifier.urlhttps://iopscience.iop.org/article/10.1149/2162-8777/ab8363
imec.availabilityPublished - open access


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