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Role of the AlGaN barrier on the long-term gate reliability of power HEMTs

dc.contributor.authorTallarico, Andrea
dc.contributor.authorPosthuma, Niels
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorSangiorgi, E
dc.contributor.authorFiegna, C
dc.date.accessioned2021-10-29T05:08:53Z
dc.date.available2021-10-29T05:08:53Z
dc.date.issued2020
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36047
dc.sourceIIOimport
dc.titleRole of the AlGaN barrier on the long-term gate reliability of power HEMTs
dc.typeJournal article
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage113872
dc.source.journalMicroelectronics Reliability
dc.source.volume114
dc.identifier.urlhttps://doi.org/10.1016/j.microrel.2020.113872
imec.availabilityPublished - imec


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