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Thermo-mechanical stress comparison of a GaN and SiC MOSFET for photovoltaic applications

dc.contributor.authorVan De Sande, Wieland
dc.contributor.authorAlavi, Omid
dc.contributor.authorNivelle, Philippe
dc.contributor.authorD'Haen, Jan
dc.contributor.authorDaenen, Michaël
dc.date.accessioned2021-10-29T05:58:01Z
dc.date.available2021-10-29T05:58:01Z
dc.date.issued2020
dc.identifier.issn1996-1073
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36128
dc.sourceIIOimport
dc.titleThermo-mechanical stress comparison of a GaN and SiC MOSFET for photovoltaic applications
dc.typeJournal article
dc.contributor.imecauthorVan De Sande, Wieland
dc.contributor.imecauthorAlavi, Omid
dc.contributor.imecauthorNivelle, Philippe
dc.contributor.imecauthorD'Haen, Jan
dc.contributor.imecauthorDaenen, Michaël
dc.contributor.orcidimecAlavi, Omid::0000-0001-6426-8485
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage5900
dc.source.journalEnergies
dc.source.issue22
dc.source.volume13
dc.identifier.urlhttps://doi.org/10.3390/en13225900
imec.availabilityPublished - open access


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