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A study of gate oxide damage due to the plasma etching process on sub-0.25μm technology

dc.contributor.authorLee, Hean-Cheal
dc.date.accessioned2021-10-14T11:29:33Z
dc.date.available2021-10-14T11:29:33Z
dc.date.issued1999-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3613
dc.sourceIIOimport
dc.titleA study of gate oxide damage due to the plasma etching process on sub-0.25μm technology
dc.typePHD thesis
dc.source.peerreviewno
imec.availabilityPublished - imec
imec.internalnotesThesis advisors: Prof. Dr. Ir. G. Declerck and Prof. Dr. Ir. R. De Keersmaecker


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