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Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors

dc.contributor.authorWach, Filip
dc.contributor.authorUren, Michael J.
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorZhao, Ming
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorKuball, Martin
dc.date.accessioned2021-10-29T07:41:28Z
dc.date.available2021-10-29T07:41:28Z
dc.date.issued2020
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36292
dc.sourceIIOimport
dc.titleLow field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors
dc.typeJournal article
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1754
dc.source.endpage1757
dc.source.journalIEEE Electron Device Letters
dc.source.issue12
dc.source.volume41
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9220913
imec.availabilityPublished - open access


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