dc.contributor.author | Wang, Hongyue | |
dc.contributor.author | Hsu, Brent | |
dc.contributor.author | Zhao, Ming | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Sibaja-Hernandez, Arturo | |
dc.contributor.author | Wang, Jinyang | |
dc.date.accessioned | 2021-10-29T07:47:02Z | |
dc.date.available | 2021-10-29T07:47:02Z | |
dc.date.issued | 2020 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/36300 | |
dc.source | IIOimport | |
dc.title | Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration | |
dc.type | Journal article | |
dc.contributor.imecauthor | Wang, Hongyue | |
dc.contributor.imecauthor | Hsu, Brent | |
dc.contributor.imecauthor | Zhao, Ming | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.imecauthor | Sibaja-Hernandez, Arturo | |
dc.contributor.orcidimec | Hsu, Brent::0000-0003-0823-6088 | |
dc.contributor.orcidimec | Zhao, Ming::0000-0002-0856-851X | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 4827 | |
dc.source.endpage | 4833 | |
dc.source.journal | IEEE Transactions on Electron Devices | |
dc.source.issue | 11 | |
dc.source.volume | 67 | |
dc.identifier.url | https://ieeexplore.ieee.org/document/9207843 | |
imec.availability | Published - imec | |