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Impact of dummy gate removal and a silicon cap on the noise performance of germanium nFinFETs

dc.contributor.authorXie, Duan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorChen, Haifeng
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-29T08:32:20Z
dc.date.available2021-10-29T08:32:20Z
dc.date.issued2020
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36367
dc.sourceIIOimport
dc.titleImpact of dummy gate removal and a silicon cap on the noise performance of germanium nFinFETs
dc.typeJournal article
dc.contributor.imecauthorXie, Duan
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage4713
dc.source.endpage4719
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume67
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9186827
imec.availabilityPublished - imec


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