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Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface

dc.contributor.authorLukyanchikova, N. B.
dc.contributor.authorPetrichuk, M. V.
dc.contributor.authorGarbar, N. P.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T11:29:47Z
dc.date.available2021-10-14T11:29:47Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3637
dc.sourceIIOimport
dc.titleNon-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage775
dc.source.endpage783
dc.source.journalSemiconductor Science and Technology
dc.source.issue9
dc.source.volume14
imec.availabilityPublished - open access


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