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RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions

dc.contributor.authorLukyanchikova, N. B.
dc.contributor.authorPetrichuk, M. V.
dc.contributor.authorGarbar, N. P.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T11:29:48Z
dc.date.available2021-10-14T11:29:48Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3638
dc.sourceIIOimport
dc.titleRTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage185
dc.source.endpage188
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume48
imec.availabilityPublished - open access
imec.internalnotesProceedings of the 11th Biennial Conf. on Insulating Films on Semiconductors - INFOS '99. 16-19 June, 1999. Kloster Banz, Germany


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