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Towards a physical understanding of spreading resistance probe profiling

dc.contributor.authorSnauwaert, J.
dc.contributor.authorHellemans, L.
dc.contributor.authorCzech, Ingrid
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorPawlik, M.
dc.date.accessioned2021-09-29T12:48:11Z
dc.date.available2021-09-29T12:48:11Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/363
dc.sourceIIOimport
dc.titleTowards a physical understanding of spreading resistance probe profiling
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.source.peerreviewno
dc.source.beginpage304
dc.source.endpage311
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue1
dc.source.volume12
imec.availabilityPublished - imec
imec.internalnotesPapers from the 2nd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors. Research Triangle Park, USA. March 23-25, 1993.


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