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Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs

dc.contributor.authorZhou, L.
dc.contributor.authorLiu, Q.
dc.contributor.authorYang, H.
dc.contributor.authorJi, Z.
dc.contributor.authorXu, H.
dc.contributor.authorTang, B.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorJiang, H.
dc.contributor.authorLuo, Y.
dc.contributor.authorWang, X.
dc.contributor.authorMa, X.
dc.contributor.authorLi, Y.
dc.contributor.authorLuo, J.
dc.contributor.authorYin, H.
dc.contributor.authorZhao, C.
dc.contributor.authorWang, W.
dc.date.accessioned2021-10-29T09:05:07Z
dc.date.available2021-10-29T09:05:07Z
dc.date.issued2020
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36415
dc.sourceIIOimport
dc.titleInsights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage498
dc.source.endpage505
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue3
dc.source.volume20
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9103041
imec.availabilityPublished - imec


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