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On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's

dc.contributor.authorMenozzi, R.
dc.contributor.authorBorgarino, M.
dc.contributor.authorvan der Zanden, Koen
dc.contributor.authorSchreurs, Dominique
dc.date.accessioned2021-10-14T11:30:30Z
dc.date.available2021-10-14T11:30:30Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3668
dc.sourceIIOimport
dc.titleOn the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's
dc.typeJournal article
dc.contributor.imecauthorSchreurs, Dominique
dc.source.peerreviewno
dc.source.beginpage152
dc.source.endpage154
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume20
imec.availabilityPublished - imec


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