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Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers

dc.contributor.authorO'Donnell, K. P.
dc.contributor.authorMartin, R. W.
dc.contributor.authorMiddleton, P. G.
dc.contributor.authorBayliss, S. C.
dc.contributor.authorFletcher, I.
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorDemeester, Piet
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T11:32:06Z
dc.date.available2021-10-14T11:32:06Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3711
dc.sourceIIOimport
dc.titleSpectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers
dc.typeJournal article
dc.contributor.imecauthorDemeester, Piet
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecDemeester, Piet::0000-0003-2810-3899
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage288
dc.source.endpage291
dc.source.journalMaterials Science and Engineering. B
dc.source.issue1_3
dc.source.volumeB59
imec.availabilityPublished - open access
imec.internalnotesE-MRS 1998 Spring Meeting, Symposium L: Nitrides and Related Wide Band Gap Materials. 16-19 June 1998; Strasbourg, France


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