Show simple item record

Radiation-induced lattice defects in InGaAsP laser diodes and their effects on device performance

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.contributor.authorHakata, T.
dc.contributor.authorKudou, T.
dc.contributor.authorYoneoka, M.
dc.contributor.authorKobayashi, K.
dc.contributor.authorNakabayashi, M.
dc.contributor.authorTakami, Y.
dc.contributor.authorSunaga, H.
dc.date.accessioned2021-10-14T11:32:37Z
dc.date.available2021-10-14T11:32:37Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3722
dc.sourceIIOimport
dc.titleRadiation-induced lattice defects in InGaAsP laser diodes and their effects on device performance
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1031
dc.source.endpage1033
dc.source.journalPhysica B
dc.source.volume274
imec.availabilityPublished - imec
imec.internalnotesPresented at the 20th International Conference on Defects in Semiconductors; 26-30 July 1999; Berkeley, CA, USA


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record