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Plasma immersion ion implantation for shallow junctions in silicon

dc.contributor.authorPinter, Istvan
dc.contributor.authorAbdulhadi, A. H.
dc.contributor.authorMakaro, Z.
dc.contributor.authorKhanh, N. Q.
dc.contributor.authorAdam, M.
dc.contributor.authorBarsony, I.
dc.contributor.authorPoortmans, Jef
dc.contributor.authorSivoththaman, Sivanarayanamoorthy
dc.contributor.authorHai-Zhi, Song
dc.contributor.authorAdriaenssens, G.
dc.date.accessioned2021-10-14T11:34:20Z
dc.date.available2021-10-14T11:34:20Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3756
dc.sourceIIOimport
dc.titlePlasma immersion ion implantation for shallow junctions in silicon
dc.typeJournal article
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpage224
dc.source.endpage227
dc.source.journalApplied Surface Science
dc.source.volume138-139
imec.availabilityPublished - imec


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