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Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures

dc.contributor.authorPokatilov, E. P.
dc.contributor.authorFomin, V. M.
dc.contributor.authorBalaban, S. N.
dc.contributor.authorGladilin, V. N.
dc.contributor.authorKlimin, S. N.
dc.contributor.authorDevreese, J. T.
dc.contributor.authorMagnus, Wim
dc.contributor.authorSchoenmaker, Wim
dc.contributor.authorCollaert, Nadine
dc.contributor.authorVan Rossum, Marc
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-14T11:34:24Z
dc.date.available2021-10-14T11:34:24Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3757
dc.sourceIIOimport
dc.titleDistribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures
dc.typeJournal article
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage6625
dc.source.endpage6631
dc.source.journalJ. Appl. Phys.
dc.source.issue9
dc.source.volume85
imec.availabilityPublished - imec


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