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Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices
dc.contributor.author | Belmonte, A. | |
dc.contributor.author | Reale, G. | |
dc.contributor.author | Fantini, A. | |
dc.contributor.author | Radhakrishnan, J. | |
dc.contributor.author | Redolfi, A. | |
dc.contributor.author | Devulder, W. | |
dc.contributor.author | Nyns, L. | |
dc.contributor.author | Kundu, S. | |
dc.contributor.author | Delhougne, R. | |
dc.contributor.author | Goux, L. | |
dc.contributor.author | Kar, G. S. | |
dc.date.accessioned | 2021-11-02T15:57:38Z | |
dc.date.available | 2021-11-02T15:57:38Z | |
dc.date.issued | 2021-OCT | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.other | WOS:000687335000009 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/37624 | |
dc.source | WOS | |
dc.title | Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices | |
dc.type | Journal article | |
dc.contributor.imecauthor | Belmonte, A. | |
dc.contributor.imecauthor | Reale, G. | |
dc.contributor.imecauthor | Fantini, A. | |
dc.contributor.imecauthor | Radhakrishnan, J. | |
dc.contributor.imecauthor | Redolfi, A. | |
dc.contributor.imecauthor | Devulder, W. | |
dc.contributor.imecauthor | Nyns, L. | |
dc.contributor.imecauthor | Kundu, S. | |
dc.contributor.imecauthor | Delhougne, R. | |
dc.contributor.imecauthor | Goux, L. | |
dc.contributor.imecauthor | Kar, G. S. | |
dc.identifier.doi | 10.1016/j.sse.2021.108058 | |
dc.source.numberofpages | 5 | |
dc.source.peerreview | yes | |
dc.source.journal | SOLID-STATE ELECTRONICS | |
dc.source.volume | 184 | |
imec.availability | Under review |
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