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dc.contributor.authorBelmonte, A.
dc.contributor.authorReale, G.
dc.contributor.authorFantini, A.
dc.contributor.authorRadhakrishnan, J.
dc.contributor.authorRedolfi, A.
dc.contributor.authorDevulder, W.
dc.contributor.authorNyns, L.
dc.contributor.authorKundu, S.
dc.contributor.authorDelhougne, R.
dc.contributor.authorGoux, L.
dc.contributor.authorKar, G. S.
dc.date.accessioned2021-11-02T15:57:38Z
dc.date.available2021-11-02T15:57:38Z
dc.date.issued2021-OCT
dc.identifier.issn0038-1101
dc.identifier.otherWOS:000687335000009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37624
dc.sourceWOS
dc.titleEffect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices
dc.typeJournal article
dc.contributor.imecauthorBelmonte, A.
dc.contributor.imecauthorReale, G.
dc.contributor.imecauthorFantini, A.
dc.contributor.imecauthorRadhakrishnan, J.
dc.contributor.imecauthorRedolfi, A.
dc.contributor.imecauthorDevulder, W.
dc.contributor.imecauthorNyns, L.
dc.contributor.imecauthorKundu, S.
dc.contributor.imecauthorDelhougne, R.
dc.contributor.imecauthorGoux, L.
dc.contributor.imecauthorKar, G. S.
dc.identifier.doi10.1016/j.sse.2021.108058
dc.source.numberofpages5
dc.source.peerreviewyes
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.volume184
imec.availabilityUnder review


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