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dc.contributor.authorPutcha, V
dc.contributor.authorCheng, L.
dc.contributor.authorAlian, A.
dc.contributor.authorZhao, M.
dc.contributor.authorLu, H.
dc.contributor.authorParvais, B.
dc.contributor.authorWaldron, N.
dc.contributor.authorLinten, D.
dc.contributor.authorCollaert, N.
dc.date.accessioned2021-11-02T15:58:24Z
dc.date.available2021-11-02T15:58:24Z
dc.date.issued2021
dc.identifier.issn1541-7026
dc.identifier.otherWOS:000672563100050
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37684
dc.sourceWOS
dc.titleOn the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices
dc.typeProceedings paper
dc.contributor.imecauthorPutcha, V
dc.contributor.imecauthorAlian, A.
dc.contributor.imecauthorZhao, M.
dc.contributor.imecauthorParvais, B.
dc.contributor.imecauthorLinten, D.
dc.contributor.imecauthorCollaert, N.
dc.contributor.orcidimecParvais, B.::0000-0003-0769-7069
dc.identifier.doi10.1109/IRPS46558.2021.9405139
dc.identifier.eisbn978-1-7281-6893-7
dc.source.numberofpages8
dc.source.peerreviewyes
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateMAR 21-24, 2021
imec.availabilityUnder review


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