Notice
This item has not yet been validated by imec staff.
Notice
This is not the latest version of this item. The latest version can be found at: https://imec-publications.be/handle/20.500.12860/37684.3
On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices
dc.contributor.author | Putcha, V | |
dc.contributor.author | Cheng, L. | |
dc.contributor.author | Alian, A. | |
dc.contributor.author | Zhao, M. | |
dc.contributor.author | Lu, H. | |
dc.contributor.author | Parvais, B. | |
dc.contributor.author | Waldron, N. | |
dc.contributor.author | Linten, D. | |
dc.contributor.author | Collaert, N. | |
dc.date.accessioned | 2021-11-02T15:58:24Z | |
dc.date.available | 2021-11-02T15:58:24Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 1541-7026 | |
dc.identifier.other | WOS:000672563100050 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/37684 | |
dc.source | WOS | |
dc.title | On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Putcha, V | |
dc.contributor.imecauthor | Alian, A. | |
dc.contributor.imecauthor | Zhao, M. | |
dc.contributor.imecauthor | Parvais, B. | |
dc.contributor.imecauthor | Linten, D. | |
dc.contributor.imecauthor | Collaert, N. | |
dc.contributor.orcidimec | Parvais, B.::0000-0003-0769-7069 | |
dc.identifier.doi | 10.1109/IRPS46558.2021.9405139 | |
dc.identifier.eisbn | 978-1-7281-6893-7 | |
dc.source.numberofpages | 8 | |
dc.source.peerreview | yes | |
dc.source.conference | IEEE International Reliability Physics Symposium (IRPS) | |
dc.source.conferencedate | MAR 21-24, 2021 | |
imec.availability | Under review |
Files in this item
Files | Size | Format | View |
---|---|---|---|
There are no files associated with this item. |