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Probing the evolution of electrically active defects in doped ferroelectric HfO2 during wake-up and fatigue

dc.contributor.authorCelano, U.
dc.contributor.authorChen, Y. H.
dc.contributor.authorMinj, A.
dc.contributor.authorBanerjee, K.
dc.contributor.authorRonchi, N.
dc.contributor.authorMcMitchell, S.
dc.contributor.authorVan Marcke, P.
dc.contributor.authorFavia, P.
dc.contributor.authorWu, T. L.
dc.contributor.authorKaczer, B.
dc.contributor.authorVan den Bosch, G.
dc.contributor.authorVan Houdt, J.
dc.contributor.authorvan der Heide, P.
dc.date.accessioned2021-11-02T15:59:26Z
dc.date.available2021-11-02T15:59:26Z
dc.date.issued2020
dc.identifier.issn0743-1562
dc.identifier.otherWOS:000668063000082
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37750
dc.sourceWOS
dc.titleProbing the evolution of electrically active defects in doped ferroelectric HfO2 during wake-up and fatigue
dc.typeProceedings paper
dc.contributor.imecauthorCelano, U.
dc.contributor.imecauthorChen, Y. H.
dc.contributor.imecauthorMinj, A.
dc.contributor.imecauthorBanerjee, K.
dc.contributor.imecauthorRonchi, N.
dc.contributor.imecauthorMcMitchell, S.
dc.contributor.imecauthorVan Marcke, P.
dc.contributor.imecauthorFavia, P.
dc.contributor.imecauthorKaczer, B.
dc.contributor.imecauthorVan den Bosch, G.
dc.contributor.imecauthorVan Houdt, J.
dc.contributor.imecauthorvan der Heide, P.
dc.contributor.orcidimecCelano, U.::0000-0002-2856-3847
dc.identifier.eisbn978-1-7281-6460-1
dc.source.numberofpages2
dc.source.peerreviewyes
dc.source.conferenceIEEE Symposium on VLSI Technology and Circuits
dc.source.conferencedateJUN 15-19, 2020
imec.availabilityUnder review


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220.500.12860/37750.22022-01-20T09:58:29Zvalidation by library/open access desk
120.500.12860/37750*2021-11-02T15:59:26Z

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