dc.contributor.author | Izmailov, R. A. | |
dc.contributor.author | O'Sullivan, Barry | |
dc.contributor.author | Popovici, Mihaela Ioana | |
dc.contributor.author | Afanas'ev, V. V. | |
dc.date.accessioned | 2021-12-15T11:00:49Z | |
dc.date.available | 2021-11-02T15:59:56Z | |
dc.date.available | 2021-12-15T11:00:49Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.other | WOS:000672563600007 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/37793.2 | |
dc.source | WOS | |
dc.title | Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers | |
dc.type | Journal article | |
dc.contributor.imecauthor | O'Sullivan, Barry | |
dc.contributor.imecauthor | Popovici, Mihaela Ioana | |
dc.contributor.orcidimec | O'Sullivan, Barry::0000-0002-9036-8241 | |
dc.contributor.orcidimec | Popovici, Mihaela Ioana::0000-0002-9838-1088 | |
dc.identifier.doi | 10.1016/j.sse.2021.108066 | |
dc.source.numberofpages | 3 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 108066 | |
dc.source.journal | SOLID-STATE ELECTRONICS | |
dc.source.issue | na | |
dc.source.volume | 183 | |
imec.availability | Published - imec | |