dc.contributor.author | Bakeroot, Benoit | |
dc.contributor.author | Geens, Karen | |
dc.contributor.author | Borga, Matteo | |
dc.contributor.author | Liang, Hu | |
dc.contributor.author | You, Shuzhen | |
dc.contributor.author | Decoutere, Stefaan | |
dc.date.accessioned | 2021-12-08T11:47:25Z | |
dc.date.available | 2021-11-02T16:00:07Z | |
dc.date.available | 2021-12-08T11:47:25Z | |
dc.date.issued | 2020 | |
dc.identifier.issn | 2475-2916 | |
dc.identifier.other | WOS:000669651600001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/37804.2 | |
dc.source | WOS | |
dc.title | Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Bakeroot, B. | |
dc.contributor.imecauthor | Geens, K. | |
dc.contributor.imecauthor | Borga, M. | |
dc.contributor.imecauthor | Liang, H. | |
dc.contributor.imecauthor | You, S. | |
dc.contributor.imecauthor | Decoutere, S. | |
dc.contributor.imecauthor | Bakeroot, Benoit | |
dc.contributor.imecauthor | Geens, Karen | |
dc.contributor.imecauthor | Borga, Matteo | |
dc.contributor.imecauthor | Liang, Hu | |
dc.contributor.imecauthor | You, Shuzhen | |
dc.contributor.imecauthor | Decoutere, Stefaan | |
dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
dc.contributor.orcidimec | Geens, Karen::0000-0003-1815-3972 | |
dc.contributor.orcidimec | Borga, Matteo::0000-0003-3087-6612 | |
dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
dc.identifier.doi | 10.1109/ASDAM50306.2020.9393871 | |
dc.identifier.eisbn | 978-1-7281-9776-0 | |
dc.source.numberofpages | 4 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 1 | |
dc.source.endpage | 4 | |
dc.source.conference | 13th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) | |
dc.source.conferencedate | OCT 11-14, 2020 | |
dc.source.conferencelocation | Smolenice, Slovakia | |
dc.source.journal | na | |
imec.availability | Published - imec | |