Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices

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dc.contributor.author	Bakeroot, B.
dc.contributor.author	Geens, K.
dc.contributor.author	Borga, M.
dc.contributor.author	Liang, H.
dc.contributor.author	You, S.
dc.contributor.author	Decoutere, S.
dc.date.accessioned	2021-11-02T16:00:07Z
dc.date.available	2021-11-02T16:00:07Z
dc.date.issued	2020
dc.identifier.issn	2475-2916
dc.identifier.other	WOS:000669651600001
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/37804
dc.source	WOS
dc.title	Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices
dc.type	Proceedings paper
dc.contributor.imecauthor	Bakeroot, B.
dc.contributor.imecauthor	Geens, K.
dc.contributor.imecauthor	Borga, M.
dc.contributor.imecauthor	Liang, H.
dc.contributor.imecauthor	You, S.
dc.contributor.imecauthor	Decoutere, S.
dc.identifier.doi	10.1109/ASDAM50306.2020.9393871
dc.identifier.eisbn	978-1-7281-9776-0
dc.source.numberofpages	4
dc.source.peerreview	yes
dc.source.beginpage	1
dc.source.endpage	4
dc.source.conference	13th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)
dc.source.conferencedate	OCT 11-14, 2020
imec.availability	Under review

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Version	Item	Date	Summary
2	20.500.12860/37804.2	2021-12-08T11:43:25Z	validation by library/open access desk
1	20.500.12860/37804*	2021-11-02T16:00:07Z