dc.contributor.author | Gorchichko, Mariia | |
dc.contributor.author | Zhang, En Xia | |
dc.contributor.author | Wang, Pan | |
dc.contributor.author | Bonaldo, Stefano | |
dc.contributor.author | Schrimpf, Ronald D. | |
dc.contributor.author | Reed, Robert A. | |
dc.contributor.author | Linten, Dimitri | |
dc.contributor.author | Mitard, Jerome | |
dc.contributor.author | Fleetwood, Daniel M. | |
dc.date.accessioned | 2022-03-31T12:20:47Z | |
dc.date.available | 2021-11-02T16:01:59Z | |
dc.date.available | 2022-03-31T08:35:24Z | |
dc.date.available | 2022-03-31T12:20:47Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 0018-9499 | |
dc.identifier.other | WOS:000655537500029 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/37952.3 | |
dc.source | WOS | |
dc.title | Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors | |
dc.type | Journal article | |
dc.contributor.imecauthor | Linten, Dimitri | |
dc.contributor.imecauthor | Mitard, Jerome | |
dc.contributor.orcidext | Bonaldo, Stefano::0000-0003-0712-5036 | |
dc.contributor.orcidext | Schrimpf, Ronald D.::0000-0001-7419-2701 | |
dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
dc.contributor.orcidimec | Mitard, Jerome::0000-0002-7422-079X | |
dc.identifier.doi | 10.1109/TNS.2021.3066612 | |
dc.source.numberofpages | 10 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 687 | |
dc.source.endpage | 696 | |
dc.source.journal | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | |
dc.source.issue | 5 | |
dc.source.volume | 68 | |
imec.availability | Published - imec | |