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dc.contributor.authorYun, Byeonghun
dc.contributor.authorPark, Dae-Woong
dc.contributor.authorChoi, Won-Jong
dc.contributor.authorUsman Mahmood, Hafiz
dc.contributor.authorLee, Sang-Gug
dc.date.accessioned2021-11-02T16:03:41Z
dc.date.available2021-11-02T16:03:41Z
dc.date.issued2021-MAR
dc.identifier.issn1531-1309
dc.identifier.otherWOS:000629021700017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38083
dc.sourceWOS
dc.titleA 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core
dc.typeJournal article
dc.contributor.imecauthorPark, Dae-Woong
dc.contributor.orcidextYun, Byeonghun::0000-0001-7847-1329
dc.contributor.orcidextChoi, Won-Jong::0000-0002-8019-4778
dc.contributor.orcidimecPark, Dae-Woong::0000-0003-2755-3935
dc.identifier.doi10.1109/LMWC.2020.3046745
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.beginpage292
dc.source.endpage295
dc.source.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
dc.source.issue3
dc.source.volume31
imec.availabilityUnder review


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