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A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core
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Authors
Yun, Byeonghun
;
Park, Dae-Woong
;
Choi, Won-Jong
;
Usman Mahmood, Hafiz
;
Lee, Sang-Gug
DOI
10.1109/LMWC.2020.3046745
ISSN
1531-1309
Issue
3
Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume
31
Title
A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core
Publication type
Journal article
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2
20.500.12860/38083.2
*
2022-09-27T07:48:52Z
validation by library/open access desk
1
20.500.12860/38083
2021-11-02T16:03:41Z
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