Browsing by author "Lee, Sang-Gug"
Now showing items 1-8 of 8
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245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-and 4-way Power Combining
Yun, Byeonghun; Park, Dae-Woong; Choi, Kyung-Sik; Song, Ho-Jin; Lee, Sang-Gug (2021) -
A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique
Park, Dae-Woong; Utomo, Dzuhri Radityo; Hong, Jong-Phil; Vaesen, Kristof; Wambacq, Piet; Lee, Sang-Gug (2020) -
A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core
Yun, Byeonghun; Park, Dae-Woong; Choi, Won-Jong; Usman Mahmood, Hafiz; Lee, Sang-Gug (2021) -
A 264-GHz, 2.3-dBm Push-Push Transformer-Based Hartley Oscillator
Utomo, Dzuhri Radityo; Park, Dae-Woong; Hong, Jong-Phil; Lee, Sang-Gug (2021) -
A 293/440 GHz Push-Push Double Feedback Oscillators with 5.0/-3.9 dBm Output Power and 2.9/0.6 % DC-to-RF Efficiency in 65 nm CMOS
Utomo, Dzuhri Radityo; Park, Dae-Woong; Yun, Byeonghun; Lee, Sang-Gug (2020) -
A D-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched G(max)-Core
Yun, Byeonghun; Park, Dae-Woong; Mahmood, Hafiz Usman; Kim, Doyoon; Lee, Sang-Gug (2021) -
A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched G(max)-Core
Park, Dae-Woong; Utomo, Dzuhri Radityo; Yun, Byeonghun; Mahmood, Hafiz Usman; Lee, Sang-Gug (2021) -
Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-G(max) Gain Boosting Technique
Park, Dae-Woong; Utomo, Dzuhri Radityo; Yun, Byeonghun; Mahmood, Hafiz Usman; Hong, Jong-Phil; Lee, Sang-Gug (2021)