Notice
This item has not yet been validated by imec staff.
Notice
This is not the latest version of this item. The latest version can be found at: https://imec-publications.be/handle/20.500.12860/38102.2
Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks
dc.contributor.author | Wang, Danghui | |
dc.contributor.author | Xu, Tianhan | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Govoreanu, Bogdan | |
dc.contributor.author | Claeys, Cor | |
dc.contributor.author | Zhang, Yang | |
dc.date.accessioned | 2021-11-02T16:04:00Z | |
dc.date.available | 2021-11-02T16:04:00Z | |
dc.date.issued | 2021-MAR | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.other | WOS:000622100700001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/38102 | |
dc.source | WOS | |
dc.title | Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks | |
dc.type | Journal article | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.imecauthor | Govoreanu, Bogdan | |
dc.contributor.orcidext | Wang, Danghui::0000-0002-2783-9987 | |
dc.contributor.orcidext | Claeys, Cor::0000-0002-6634-4709 | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.identifier.doi | 10.1109/TED.2020.3047356 | |
dc.source.numberofpages | 6 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 948 | |
dc.source.endpage | 953 | |
dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
dc.source.issue | 3 | |
dc.source.volume | 68 | |
imec.availability | Under review |
Files in this item
Files | Size | Format | View |
---|---|---|---|
There are no files associated with this item. |