| dc.contributor.author | Vandemaele, Michiel | |
| dc.contributor.author | Chuang, Kai-Hsin | |
| dc.contributor.author | Bury, Erik | |
| dc.contributor.author | Tyaginov, Stanislav | |
| dc.contributor.author | Groeseneken, Guido | |
| dc.contributor.author | Kaczer, Ben | |
| dc.date.accessioned | 2022-01-27T11:03:13Z | |
| dc.date.available | 2021-11-02T16:05:24Z | |
| dc.date.available | 2022-01-27T11:03:13Z | |
| dc.date.issued | 2020 | |
| dc.identifier.issn | 1541-7026 | |
| dc.identifier.other | WOS:000612717200001 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/38215.2 | |
| dc.source | WOS | |
| dc.title | The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation | |
| dc.type | Proceedings paper | |
| dc.contributor.imecauthor | Vandemaele, Michiel | |
| dc.contributor.imecauthor | Chuang, Kai-Hsin | |
| dc.contributor.imecauthor | Bury, Erik | |
| dc.contributor.imecauthor | Tyaginov, Stanislav | |
| dc.contributor.imecauthor | Groeseneken, Guido | |
| dc.contributor.imecauthor | Kaczer, Ben | |
| dc.contributor.orcidimec | Vandemaele, Michiel::0000-0003-0740-4115 | |
| dc.contributor.orcidimec | Bury, Erik::0000-0002-5847-3949 | |
| dc.contributor.orcidimec | Groeseneken, Guido::0000-0003-3763-2098 | |
| dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
| dc.identifier.eisbn | 978-1-7281-3199-3 | |
| dc.source.numberofpages | 7 | |
| dc.source.peerreview | yes | |
| dc.source.conference | IEEE International Reliability Physics Symposium (IRPS) | |
| dc.source.conferencedate | APR 28-MAY 30, 2020 | |
| dc.source.conferencelocation | Virtual | |
| dc.source.journal | na | |
| imec.availability | Published - imec | |
