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dc.contributor.authorMaldonado, D.
dc.contributor.authorRoldan, J. B.
dc.contributor.authorRoldan, A. M.
dc.contributor.authorJimenez-Molinos, F.
dc.contributor.authorHui, F.
dc.contributor.authorJing, Xu
dc.contributor.authorWen, C.
dc.contributor.authorLanza, M.
dc.contributor.authorShi, Yuanyuan
dc.date.accessioned2021-11-24T09:12:09Z
dc.date.available2021-11-02T16:05:41Z
dc.date.available2021-11-24T09:12:09Z
dc.date.issued2020
dc.identifier.issn1541-7026
dc.identifier.otherWOS:000612717200028
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38226.2
dc.sourceWOS
dc.titleInfluence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks
dc.typeProceedings paper
dc.contributor.imecauthorShi, Y.
dc.contributor.imecauthorShi, Yuanyuan
dc.contributor.orcidimecShi, Yuanyuan::0000-0002-4836-6752
dc.identifier.eisbn978-1-7281-3199-3
dc.source.numberofpages5
dc.source.peerreviewyes
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateAPR 28-MAY 30, 2020
dc.source.conferencelocationDallas, TX, USA
dc.source.journalna
imec.availabilityPublished - imec


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