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Demonstration of a High-Efficiency Short-Cavity III-V-on-Si C-Band DFB Laser Diode

dc.contributor.authorRahimi, Javad
dc.contributor.authorVan Kerrebrouck, Joris
dc.contributor.authorHaq, Bahawal
dc.contributor.authorBauwelinck, Johan
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorMorthier, Geert
dc.date.accessioned2021-11-24T05:03:11Z
dc.date.available2021-11-24T05:03:11Z
dc.date.issued2022-MAY-JUN
dc.identifier.issn1077-260X
dc.identifier.otherWOS:000718815000001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38462
dc.sourceWOS
dc.titleDemonstration of a High-Efficiency Short-Cavity III-V-on-Si C-Band DFB Laser Diode
dc.typeJournal article
dc.contributor.imecauthorRahimi, Javad
dc.contributor.imecauthorVan Kerrebrouck, Joris
dc.contributor.imecauthorBauwelinck, Johan
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.imecauthorMorthier, Geert
dc.contributor.orcidimecVan Kerrebrouck, Joris::0000-0002-6611-7979
dc.contributor.orcidimecBauwelinck, Johan::0000-0001-5254-2408
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.contributor.orcidimecMorthier, Geert::0000-0003-1819-6489
dc.identifier.doi10.1109/JSTQE.2021.3122552
dc.source.numberofpages6
dc.source.peerreviewyes
dc.source.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
dc.source.issue3
dc.source.volume28
imec.availabilityUnder review


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220.500.12860/38462.22023-03-30T10:21:40Zvalidation by library/open access desk
120.500.12860/38462*2021-11-24T05:03:11Z

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