dc.contributor.author | Millesimo, M. | |
dc.contributor.author | Fiegna, C. | |
dc.contributor.author | Tallarico, A. N. | |
dc.contributor.author | Posthuma, Niels | |
dc.contributor.author | Borga, Matteo | |
dc.contributor.author | Bakeroot, Benoit | |
dc.contributor.author | Decoutere, Stefaan | |
dc.date.accessioned | 2021-12-09T10:06:44Z | |
dc.date.available | 2021-11-28T02:05:51Z | |
dc.date.available | 2021-12-09T10:06:44Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.other | WOS:000711645500060 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/38496.2 | |
dc.source | WOS | |
dc.title | High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Posthuma, Niels | |
dc.contributor.imecauthor | Borga, Matteo | |
dc.contributor.imecauthor | Bakeroot, Benoit | |
dc.contributor.imecauthor | Decoutere, Stefaan | |
dc.contributor.orcidimec | Posthuma, Niels::0000-0002-6029-1909 | |
dc.contributor.orcidimec | Borga, Matteo::0000-0003-3087-6612 | |
dc.contributor.orcidimec | Bakeroot, Benoit::0000-0003-4392-1777 | |
dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
dc.identifier.doi | 10.1109/TED.2021.3111144 | |
dc.source.numberofpages | 6 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 5701 | |
dc.source.endpage | 5706 | |
dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
dc.source.issue | 11 | |
dc.source.volume | 68 | |
imec.availability | Published - imec | |