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dc.contributor.authorlebedev, Mikhail
dc.contributor.authorMayer, Thomas
dc.contributor.authorvan Dorp, Dennis
dc.contributor.authorAbrenica, Graniel
dc.contributor.authorArnauts, Sophia
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorDe Gendt, Stefan
dc.contributor.editorAbrenica, Graniel
dc.date.accessioned2021-11-30T16:46:57Z
dc.date.available2021-11-30T16:46:57Z
dc.date.issued2021-05
dc.identifier.issnMA2021-01 1029
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38502
dc.titleAtomic-Scale Investigations on the Wet Etching of Group IV Semiconductors in Acidic H2O2 Solution: The Case Ge Versus Si-Ge
dc.typeMeeting abstract
dc.contributor.imecauthorvan Dorp, Dennis
dc.contributor.imecauthorAbrenica, Graniel
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecvan Dorp, Dennis
dc.contributor.orcidimecDe Gendt, Stefan
dc.contributor.orcidimecvan Dorp, Dennis::0000-0002-1085-4232
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.numberofpages1
dc.source.peerreviewno
dc.subject.disciplineMaterials science
dc.source.conferenceThe Electrochemical Society
dc.source.conferencedateMay 30 2021
dc.source.conferencelocationOnline
dc.source.journalECS Electrochemical society
imec.availabilityPublished - open access


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