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Introducing 2D-FETs in Device Scaling Roadmap using DTCO

dc.contributor.authorAhmed, Zubair
dc.contributor.authorAfzalian, Aryan
dc.contributor.authorSchram, Tom
dc.contributor.authorJang, Doyoung
dc.contributor.authorVerreck, Devin
dc.contributor.authorSmets, Quentin
dc.contributor.authorSchuddinck, Pieter
dc.contributor.authorChehab, Bilal
dc.contributor.authorSutar, Surajit
dc.contributor.authorArutchelvan, Goutham
dc.contributor.authorSoussou, Assawer
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorSpessot, Alessio
dc.contributor.authorRadu, Iuliana
dc.contributor.authorParvais, Bertrand
dc.contributor.authorRyckaert, Julien
dc.contributor.authorNa, Myung Hee
dc.date.accessioned2021-12-21T13:23:43Z
dc.date.available2021-12-06T02:06:36Z
dc.date.available2021-12-21T13:23:43Z
dc.date.issued2020
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000717011600018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38553.2
dc.sourceWOS
dc.titleIntroducing 2D-FETs in Device Scaling Roadmap using DTCO
dc.typeProceedings paper
dc.contributor.imecauthorAhmed, Z.
dc.contributor.imecauthorAfzalian, A.
dc.contributor.imecauthorSchram, T.
dc.contributor.imecauthorJang, D.
dc.contributor.imecauthorVerreck, D.
dc.contributor.imecauthorSmets, Q.
dc.contributor.imecauthorSchuddinck, P.
dc.contributor.imecauthorChehab, B.
dc.contributor.imecauthorSutar, S.
dc.contributor.imecauthorArutchelvan, G.
dc.contributor.imecauthorAsselberghs, I
dc.contributor.imecauthorSpessot, A.
dc.contributor.imecauthorRadu, I. P.
dc.contributor.imecauthorParvais, B.
dc.contributor.imecauthorRyckaert, J.
dc.contributor.imecauthorNa, M. H.
dc.contributor.imecauthorAhmed, Zubair
dc.contributor.imecauthorAfzalian, Aryan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorJang, Doyoung
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorSchuddinck, Pieter
dc.contributor.imecauthorChehab, Bilal
dc.contributor.imecauthorSutar, Surajit
dc.contributor.imecauthorArutchelvan, Goutham
dc.contributor.imecauthorSoussou, Assawer
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorRyckaert, Julien
dc.contributor.imecauthorNa, Myung Hee
dc.contributor.orcidimecAfzalian, Aryan::0000-0002-5260-0281
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.identifier.doi10.1109/IEDM13553.2020.9371906
dc.identifier.eisbn978-1-7281-8888-1
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
dc.source.conferencelocationSan Francisco, CA, USA
dc.source.journalna
imec.availabilityPublished - imec


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220.500.12860/38553.2*2021-12-21T13:17:57Zvalidation by library/open access desk
120.500.12860/385532021-12-06T02:06:36Z

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