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A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

dc.contributor.authorLi, Roy
dc.contributor.authorDumoulin Stuyck, Nard
dc.contributor.authorKubicek, Stefan
dc.contributor.authorJussot, Julien
dc.contributor.authorChan, BT
dc.contributor.authorMohiyaddin, Fahd Ayyalil
dc.contributor.authorElsayed, Asser
dc.contributor.authorShehata, Mohamed
dc.contributor.authorSimion, George
dc.contributor.authorGodfrin, Clement
dc.contributor.authorCanvel, Yann
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorGoux, Ludovic
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorRadu, Iuliana
dc.date.accessioned2021-12-16T10:08:29Z
dc.date.available2021-12-06T02:06:49Z
dc.date.available2021-12-16T10:08:29Z
dc.date.issued2020
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000717011600067
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38560.2
dc.sourceWOS
dc.titleA flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
dc.typeProceedings paper
dc.contributor.imecauthorLi, R.
dc.contributor.imecauthorStuyck, N. I. Dumoulin
dc.contributor.imecauthorKubicek, S.
dc.contributor.imecauthorJussot, J.
dc.contributor.imecauthorChan, B. T.
dc.contributor.imecauthorMohiyaddin, F. A.
dc.contributor.imecauthorElsayed, A.
dc.contributor.imecauthorShehata, M.
dc.contributor.imecauthorSimion, G.
dc.contributor.imecauthorGodfrin, C.
dc.contributor.imecauthorCanvel, Y.
dc.contributor.imecauthorIvanov, Ts
dc.contributor.imecauthorGoux, L.
dc.contributor.imecauthorGovoreanu, B.
dc.contributor.imecauthorRadu, I. P.
dc.contributor.imecauthorLi, Roy
dc.contributor.imecauthorDumoulin Stuyck, Nard
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorJussot, Julien
dc.contributor.imecauthorChan, BT
dc.contributor.imecauthorMohiyaddin, Fahd Ayyalil
dc.contributor.imecauthorElsayed, Asser
dc.contributor.imecauthorShehata, Mohamed
dc.contributor.imecauthorSimion, George
dc.contributor.imecauthorGodfrin, Clement
dc.contributor.imecauthorCanvel, Yann
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecLi, Roy::0000-0002-2145-7590
dc.contributor.orcidimecJussot, Julien::0000-0002-2484-3462
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.contributor.orcidimecGodfrin, Clement::0000-0002-5244-3474
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.identifier.doi10.1109/IEDM13553.2020.9371956
dc.identifier.eisbn978-1-7281-8888-1
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
dc.source.conferencelocationSan Francisco, CA, USA
dc.source.journalna
imec.availabilityPublished - imec


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220.500.12860/38560.2*2021-12-16T09:58:19Zvalidation by library/open access desk
120.500.12860/385602021-12-06T02:06:49Z

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