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dc.contributor.authorAli, T.
dc.contributor.authorMertens, K.
dc.contributor.authorOlivo, R.
dc.contributor.authorRudolph, M.
dc.contributor.authorOehler, S.
dc.contributor.authorKuehnel, K.
dc.contributor.authorLehninger, D.
dc.contributor.authorMueller, F.
dc.contributor.authorLederer, M.
dc.contributor.authorHoffmann, R.
dc.contributor.authorSchramm, P.
dc.contributor.authorBiedermann, K.
dc.contributor.authorKia, Alireza M.
dc.contributor.authorMetzger, J.
dc.contributor.authorBinder, R.
dc.contributor.authorCzernohorsky, M.
dc.contributor.authorKaempfe, T.
dc.contributor.authorMueller, J.
dc.contributor.authorSeidel, K.
dc.contributor.authorVan Houdt, J.
dc.contributor.authorEng, L. M.
dc.date.accessioned2021-12-06T02:06:50Z
dc.date.available2021-12-06T02:06:50Z
dc.date.issued2020
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000717011600091
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38564
dc.sourceWOS
dc.titleA Novel Hybrid High-Speed and Low Power Antiferroelectric HSO Boosted Charge Trap Memory for High-Density Storage
dc.typeProceedings paper
dc.contributor.imecauthorVan Houdt, J.
dc.identifier.doi10.1109/IEDM13553.2020.9371980
dc.identifier.eisbn978-1-7281-8888-1
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
imec.availabilityUnder review


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