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Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al2O3 Capping Layer and TiN Gate
dc.contributor.author | Wang, Danghui | |
dc.contributor.author | Zheng, Junna | |
dc.contributor.author | Zhang, Yang | |
dc.contributor.author | Xu, Tianhan | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Govoreanu, Bogdan | |
dc.contributor.author | Claeys, Cor | |
dc.date.accessioned | 2021-12-16T02:05:47Z | |
dc.date.available | 2021-12-16T02:05:47Z | |
dc.date.issued | 2021-DEC | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.other | WOS:000724501000013 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/38617 | |
dc.source | WOS | |
dc.title | Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al2O3 Capping Layer and TiN Gate | |
dc.type | Journal article | |
dc.contributor.imecauthor | Wang, Danghui | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.imecauthor | Govoreanu, Bogdan | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.identifier.doi | 10.1109/TED.2021.3118660 | |
dc.source.numberofpages | 6 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 6020 | |
dc.source.endpage | 6025 | |
dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
dc.source.issue | 12 | |
dc.source.volume | 68 | |
imec.availability | Under review |
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