Experimental quantification of the robustness of adiabatic rapid passage for quantum state inversion in semiconductor quantum dots

Abstract

Adiabatic rapid passage (ARP) is demonstrated in a single In(Ga)As quantum dot (QD) over a wide range of laser tuning relative to the exciton transition energy to assess the level of robustness of this quantum state inversion gate for practical QD systems. Our experiments indicate a drop in exciton inversion by only 5% for a detuning of 9.3 meV, indicating accessible detunings that span the typical inhomogeneous broadening of self-assembled QD ensembles. Our findings indicate that ARP is an ideal control protocol for synchronous triggering of quantum light sources for applications in photonic quantum technology. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement