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Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well

dc.contributor.authorTriques, A. L. C.
dc.contributor.authorIikawa, F.
dc.contributor.authorBrum, J. A.
dc.contributor.authorMaialle, M. Z.
dc.contributor.authorPereira, Ricardo
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-14T11:44:25Z
dc.date.available2021-10-14T11:44:25Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3894
dc.sourceIIOimport
dc.titleCarrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well
dc.typeJournal article
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage551
dc.source.endpage554
dc.source.journalSuperlattices and Microstructures
dc.source.issue3
dc.source.volume25
imec.availabilityPublished - open access


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