Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

dc.contributor.author	Wang, Jie
dc.contributor.author	Chen, Zhanfei
dc.contributor.author	You, Shuzhen
dc.contributor.author	Bakeroot, Benoit
dc.contributor.author	Liu, Jun
dc.contributor.author	Decoutere, Stefaan
dc.date.accessioned	2022-02-21T13:49:17Z
dc.date.available	2022-02-21T13:49:17Z
dc.date.issued	2021
dc.identifier.issn	2072-666X
dc.identifier.other	WOS:000622828400001
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/38950
dc.source	WOS
dc.title	Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
dc.type	Journal article
dc.contributor.imecauthor	You, Shuzhen
dc.contributor.imecauthor	Bakeroot, Benoit
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.orcidext	Wang, Jie::0000-0002-4635-8230
dc.contributor.orcidext	Chen, Zhanfei::0000-0002-0711-8760
dc.contributor.orcidimec	Bakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.identifier.doi	10.3390/mi12020199
dc.source.numberofpages	9
dc.source.peerreview	yes
dc.source.beginpage	199
dc.source.journal	MICROMACHINES
dc.identifier.pmid	MEDLINE:33671856
dc.source.issue	2
dc.source.volume	12
imec.availability	Published - open access