Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells

Abstract

The current state of dopant assessment for the optimization of the III-nitride-based heterostructures for high frequency, high power, and light emission applications relies heavily on quantitative chemical analysis techniques. In such complex heterostructures, determination of p-type carrier density of the cap layer, control of background concentration, and assessment of polarization induced confined carriers are necessary for the realization of optimal devices. None of these can be completely inferred from chemical analysis owing to several material and growth issues including poor activation of Mg, presence of O impurities, and amphoteric nature of carbon impurities. Here, as regions of interest require nanometer resolution, especially near the interfaces featuring triangular quantum wells and exhibiting electron/hole confinement, exploitation of the behavior of the nanosize metal-semiconductor junction formed between the metallic scanning probe microscopy probe and the III-nitride surface is promising for carrier determination. By combining two techniques sensitive to local change in capacitance and rectifying characteristic of conduction at the nanoscale, the nature of free carriers originating from extrinsic n-type and p-type dopants and polarization induced confined carriers, two-dimensional electron gas and hole gas, were eventually revealed across III-nitride heterostructures.