dc.contributor.author | Agopian, P. G. D. | |
dc.contributor.author | Carmo, G. J. | |
dc.contributor.author | Martino, J. A. | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Peralagu, Uthayasankaran | |
dc.contributor.author | Parvais, Bertrand | |
dc.contributor.author | Waldron, Niamh | |
dc.contributor.author | Collaert, Nadine | |
dc.date.accessioned | 2022-02-25T13:34:39Z | |
dc.date.available | 2022-02-25T13:34:39Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.other | WOS:000701908200005 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/39157 | |
dc.source | WOS | |
dc.title | Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 degrees C | |
dc.type | Journal article | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.imecauthor | Peralagu, Uthayasankaran | |
dc.contributor.imecauthor | Parvais, Bertrand | |
dc.contributor.imecauthor | Waldron, Niamh | |
dc.contributor.imecauthor | Collaert, Nadine | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.contributor.orcidimec | Peralagu, Uthayasankaran::0000-0001-9166-4408 | |
dc.contributor.orcidimec | Parvais, Bertrand::0000-0003-0769-7069 | |
dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
dc.identifier.doi | 10.1016/j.sse.2021.108091 | |
dc.source.numberofpages | 6 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 108091 | |
dc.source.journal | SOLID-STATE ELECTRONICS | |
dc.source.issue | na | |
dc.source.volume | 185 | |
imec.availability | Published - imec | |