dc.contributor.author | Han, Han | |
dc.contributor.author | Strakos, Libor | |
dc.contributor.author | Hantschel, Thomas | |
dc.contributor.author | Vystavel, Tomas | |
dc.contributor.author | Porret, Clément | |
dc.contributor.author | Loo, Roger | |
dc.contributor.author | Caymax, Matty | |
dc.date.accessioned | 2022-03-03T13:32:32Z | |
dc.date.available | 2022-03-03T13:32:32Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 0968-4328 | |
dc.identifier.other | WOS:000704887100004 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/39274 | |
dc.source | WOS | |
dc.title | Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM | |
dc.type | Journal article | |
dc.contributor.imecauthor | Han, Han | |
dc.contributor.imecauthor | Hantschel, Thomas | |
dc.contributor.imecauthor | Porret, Clément | |
dc.contributor.imecauthor | Loo, Roger | |
dc.contributor.imecauthor | Caymax, Matty | |
dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
dc.contributor.orcidimec | Han, Han::0000-0003-2169-8332 | |
dc.contributor.orcidimec | Hantschel, Thomas::0000-0001-9476-4084 | |
dc.contributor.orcidimec | Porret, Clément::0000-0002-4561-348X | |
dc.identifier.doi | 10.1016/j.micron.2021.103123 | |
dc.source.numberofpages | 8 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 103123 | |
dc.source.journal | MICRON | |
dc.identifier.pmid | MEDLINE:34343885 | |
dc.source.issue | na | |
dc.source.volume | 150 | |
imec.availability | Published - imec | |