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Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices

dc.contributor.authorCao, Jingchen
dc.contributor.authorWang, Peng Fei
dc.contributor.authorLi, Xun
dc.contributor.authorGuo, Zixiang
dc.contributor.authorZhang, En Xia
dc.contributor.authorReed, Robert A.
dc.contributor.authorAlles, Michael L.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorArreghini, Antonio
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorBastos, Joao P.
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorLinten, Dimitri
dc.date.accessioned2022-05-20T07:47:28Z
dc.date.available2022-03-30T02:07:18Z
dc.date.available2022-05-20T07:47:28Z
dc.date.issued2022
dc.identifier.issn0018-9499
dc.identifier.otherWOS:000770010500031
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39554.2
dc.sourceWOS
dc.titleTotal-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices
dc.typeJournal article
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorBastos, Joao P.
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.identifier.doi10.1109/TNS.2021.3133407
dc.source.numberofpages7
dc.source.peerreviewyes
dc.source.beginpage314
dc.source.endpage320
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.issue3
dc.source.volume69
imec.availabilityUnder review


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VersionItemDateSummary
320.500.12860/39554.32022-06-28T14:37:59Zvalidation by library/open access desk
220.500.12860/39554.2*2022-05-20T07:46:34Zvalidation by imec author
120.500.12860/395542022-03-30T02:07:18Z

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