dc.contributor.author | Liu, Hsiao-Hsuan | |
dc.contributor.author | Salahuddin, Shairfe Muhammad | |
dc.contributor.author | Abdi, Dawit | |
dc.contributor.author | Chen, Rongmei | |
dc.contributor.author | Weckx, Pieter | |
dc.contributor.author | Matagne, Philippe | |
dc.contributor.author | Catthoor, Francky | |
dc.date.accessioned | 2023-05-16T12:57:32Z | |
dc.date.available | 2022-05-04T02:17:53Z | |
dc.date.available | 2023-05-16T12:57:32Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.other | WOS:000785777900001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/39729.2 | |
dc.source | WOS | |
dc.title | Extended Methodology to Determine SRAM Write Margin in Resistance-Dominated Technology Node | |
dc.type | Journal article | |
dc.contributor.imecauthor | Liu, Hsiao-Hsuan | |
dc.contributor.imecauthor | Salahuddin, Shairfe Muhammad | |
dc.contributor.imecauthor | Abdi, Dawit | |
dc.contributor.imecauthor | Chen, Rongmei | |
dc.contributor.imecauthor | Weckx, Pieter | |
dc.contributor.imecauthor | Matagne, Philippe | |
dc.contributor.imecauthor | Catthoor, Francky | |
dc.contributor.orcidimec | Abdi, Dawit::0000-0002-3598-8798 | |
dc.contributor.orcidimec | Catthoor, Francky::0000-0002-3599-8515 | |
dc.contributor.orcidimec | Salahuddin, Shairfe Muhammad::0000-0002-6483-8430 | |
dc.date.embargo | 2029-04-22 | |
dc.identifier.doi | 10.1109/TED.2022.3165738 | |
dc.source.numberofpages | 5 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 3113 | |
dc.source.endpage | 3117 | |
dc.source.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
dc.source.issue | 6 | |
dc.source.volume | 69 | |
imec.availability | Published - imec | |