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Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates

dc.contributor.authorCardinael, P.
dc.contributor.authorRack, M.
dc.contributor.authorLederer, D.
dc.contributor.authorRaskin, J-P
dc.contributor.authorYadav, Sachin
dc.contributor.authorZhao, Ming
dc.contributor.authorCollaert, Nadine
dc.contributor.authorParvais, Bertrand
dc.date.accessioned2022-05-25T08:43:25Z
dc.date.available2022-05-15T02:18:28Z
dc.date.available2022-05-25T08:43:25Z
dc.date.issued2021
dc.identifier.issn1930-8876
dc.identifier.otherWOS:000790809500072
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39826.2
dc.sourceWOS
dc.titleImpact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates
dc.typeProceedings paper
dc.contributor.imecauthorYadav, Sachin
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecYadav, Sachin::0000-0003-4530-2603
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.identifier.doi10.1109/ESSDERC53440.2021.9631822
dc.identifier.eisbn978-1-6654-3748-6
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.beginpage303
dc.source.endpage306
dc.source.conferenceIEEE 51st European Solid-State Device Research Conference (ESSDERC)
dc.source.conferencedateSEP 06-09, 2021
dc.source.conferencelocationVirtual
dc.source.journalna
imec.availabilityPublished - imec


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220.500.12860/39826.2*2022-05-25T08:40:17Zvalidation by library/open access desk
120.500.12860/398262022-05-15T02:18:28Z

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