Show simple item record

Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg

dc.contributor.authorWu, Xiangyu
dc.contributor.authorCott, Daire
dc.contributor.authorLin, Zaoyang
dc.contributor.authorShi, Yuanyuan
dc.contributor.authorGroven, Benjamin
dc.contributor.authorMorin, Pierre
dc.contributor.authorVerreck, Devin
dc.contributor.authorSmets, Quentin
dc.contributor.authorMedina, Henry
dc.contributor.authorSutar, Surajit
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorRadu, Iuliana
dc.contributor.authorLin, Dennis
dc.date.accessioned2022-09-27T08:26:29Z
dc.date.available2022-07-09T02:27:22Z
dc.date.available2022-09-27T08:26:29Z
dc.date.issued2021
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000812325400193
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40076.2
dc.sourceWOS
dc.titleDual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg
dc.typeProceedings paper
dc.contributor.imecauthorWu, Xiangyu
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorLin, Zaoyang
dc.contributor.imecauthorShi, Yuanyuan
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorMorin, Pierre
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorMedina, Henry
dc.contributor.imecauthorSutar, Surajit
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorLin, Dennis
dc.contributor.orcidimecShi, Yuanyuan::0000-0002-4836-6752
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecMorin, Pierre::0000-0002-4637-496X
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecSutar, Surajit::0000-0003-3114-718X
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.identifier.doi10.1109/IEDM19574.2021.9720695
dc.identifier.eisbn978-1-6654-2572-8
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
dc.source.journalna
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record

Version history

VersionItemDateSummary
220.500.12860/40076.2*2022-09-27T08:25:50Zvalidation by library/open access desk
120.500.12860/400762022-07-09T02:27:22Z

*Selected version