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Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory

dc.contributor.authorRamesh, Siva
dc.contributor.authorVadakupudhu Palayam, Senthil
dc.contributor.authorAjaykumar, Arjun
dc.contributor.authorOpsomer, Karl
dc.contributor.authorBastos, Joao
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorBreuil, Laurent
dc.contributor.authorArreghini, Antonio
dc.contributor.authorWouters, Lennaert
dc.contributor.authorSpampinato, Valentina
dc.contributor.authorFavia, Paola
dc.contributor.authorNalin Mehta, Ankit
dc.contributor.authorCarolan, Patrick
dc.contributor.authorNyns, Laura
dc.contributor.authorKatcko, Kostantine
dc.contributor.authorStiers, Jimmy
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorRosmeulen, Maarten
dc.date.accessioned2022-07-11T09:55:47Z
dc.date.available2022-07-09T02:27:24Z
dc.date.available2022-07-11T09:55:47Z
dc.date.issued2021
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000812325400074
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40081.2
dc.sourceWOS
dc.titleUnderstanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory
dc.typeProceedings paper
dc.contributor.imecauthorRamesh, Siva
dc.contributor.imecauthorVadakupudhu Palayam, Senthil
dc.contributor.imecauthorAjaykumar, Arjun
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorBastos, Joao
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorWouters, Lennaert
dc.contributor.imecauthorSpampinato, Valentina
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorNalin Mehta, Ankit
dc.contributor.imecauthorCarolan, Patrick
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorKatcko, Kostantine
dc.contributor.imecauthorStiers, Jimmy
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.orcidimecRamesh, Siva::0000-0002-8473-7258
dc.contributor.orcidimecBastos, Joao::0000-0002-8877-9850
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecWouters, Lennaert::0000-0002-6730-9542
dc.contributor.orcidimecSpampinato, Valentina::0000-0003-3225-6740
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecNalin Mehta, Ankit::0000-0002-2169-940X
dc.contributor.orcidimecCarolan, Patrick::0000-0001-5931-3093
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecKatcko, Kostantine::0000-0002-0576-8962
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.identifier.doi10.1109/IEDM19574.2021.9720571
dc.identifier.eisbn978-1-6654-2572-8
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
dc.source.journalna
imec.availabilityPublished - imec


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220.500.12860/40081.2*2022-07-11T09:48:02Zvalidation by library/open access desk
120.500.12860/400812022-07-09T02:27:24Z

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