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dc.contributor.authorWu, W-M
dc.contributor.authorChen, S-H
dc.contributor.authorSibaja-Hernandez, A.
dc.contributor.authorYadav, S.
dc.contributor.authorPeralagu, U.
dc.contributor.authorYu, H.
dc.contributor.authorAlian, A.
dc.contributor.authorPutcha, V
dc.contributor.authorParvais, B.
dc.contributor.authorGroeseneken, G.
dc.contributor.authorKer, M-D
dc.contributor.authorCollaert, N.
dc.date.accessioned2022-07-09T02:28:02Z
dc.date.available2022-07-09T02:28:02Z
dc.date.issued2021
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000812325400084
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40095
dc.sourceWOS
dc.titleESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
dc.typeProceedings paper
dc.contributor.imecauthorWu, W-M
dc.contributor.imecauthorChen, S-H
dc.contributor.imecauthorSibaja-Hernandez, A.
dc.contributor.imecauthorYadav, S.
dc.contributor.imecauthorPeralagu, U.
dc.contributor.imecauthorYu, H.
dc.contributor.imecauthorAlian, A.
dc.contributor.imecauthorPutcha, V
dc.contributor.imecauthorParvais, B.
dc.contributor.imecauthorGroeseneken, G.
dc.contributor.imecauthorCollaert, N.
dc.identifier.doi10.1109/IEDM19574.2021.9720581
dc.identifier.eisbn978-1-6654-2572-8
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
imec.availabilityUnder review


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