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ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
dc.contributor.author | Wu, W-M | |
dc.contributor.author | Chen, S-H | |
dc.contributor.author | Sibaja-Hernandez, A. | |
dc.contributor.author | Yadav, S. | |
dc.contributor.author | Peralagu, U. | |
dc.contributor.author | Yu, H. | |
dc.contributor.author | Alian, A. | |
dc.contributor.author | Putcha, V | |
dc.contributor.author | Parvais, B. | |
dc.contributor.author | Groeseneken, G. | |
dc.contributor.author | Ker, M-D | |
dc.contributor.author | Collaert, N. | |
dc.date.accessioned | 2022-07-09T02:28:02Z | |
dc.date.available | 2022-07-09T02:28:02Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 2380-9248 | |
dc.identifier.other | WOS:000812325400084 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40095 | |
dc.source | WOS | |
dc.title | ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Wu, W-M | |
dc.contributor.imecauthor | Chen, S-H | |
dc.contributor.imecauthor | Sibaja-Hernandez, A. | |
dc.contributor.imecauthor | Yadav, S. | |
dc.contributor.imecauthor | Peralagu, U. | |
dc.contributor.imecauthor | Yu, H. | |
dc.contributor.imecauthor | Alian, A. | |
dc.contributor.imecauthor | Putcha, V | |
dc.contributor.imecauthor | Parvais, B. | |
dc.contributor.imecauthor | Groeseneken, G. | |
dc.contributor.imecauthor | Collaert, N. | |
dc.identifier.doi | 10.1109/IEDM19574.2021.9720581 | |
dc.identifier.eisbn | 978-1-6654-2572-8 | |
dc.source.numberofpages | 4 | |
dc.source.peerreview | yes | |
dc.source.conference | IEEE International Electron Devices Meeting (IEDM) | |
dc.source.conferencedate | DEC 11-16, 2021 | |
dc.source.conferencelocation | San Francisco | |
imec.availability | Under review |
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