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Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling
dc.contributor.author | Ramesh, S. | |
dc.contributor.author | Ivanov, Ts. | |
dc.contributor.author | Sibaja-Hernandez, A. | |
dc.contributor.author | Alian, A. | |
dc.contributor.author | Camerotto, E. | |
dc.contributor.author | Milenin, A. | |
dc.contributor.author | Pinna, N. | |
dc.contributor.author | El Kazzi, S. | |
dc.contributor.author | Lin, D. | |
dc.contributor.author | Lagrain, P. | |
dc.contributor.author | Favia, P. | |
dc.contributor.author | Bender, H. | |
dc.contributor.author | Collaert, N. | |
dc.contributor.author | De Meyer, K. | |
dc.date.accessioned | 2022-07-28T02:30:39Z | |
dc.date.available | 2022-07-28T02:30:39Z | |
dc.date.issued | 2022-JUL 14 | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.other | WOS:000827590900003 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40177 | |
dc.source | WOS | |
dc.title | Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling | |
dc.type | Journal article | |
dc.contributor.imecauthor | Ivanov, Ts. | |
dc.contributor.imecauthor | Sibaja-Hernandez, A. | |
dc.contributor.imecauthor | Alian, A. | |
dc.contributor.imecauthor | Milenin, A. | |
dc.contributor.imecauthor | Pinna, N. | |
dc.contributor.imecauthor | El Kazzi, S. | |
dc.contributor.imecauthor | Lin, D. | |
dc.contributor.imecauthor | Lagrain, P. | |
dc.contributor.imecauthor | Favia, P. | |
dc.contributor.imecauthor | Bender, H. | |
dc.contributor.imecauthor | Collaert, N. | |
dc.identifier.doi | 10.1063/5.0092535 | |
dc.source.numberofpages | 14 | |
dc.source.peerreview | yes | |
dc.source.journal | JOURNAL OF APPLIED PHYSICS | |
dc.source.issue | 2 | |
dc.source.volume | 132 | |
imec.availability | Under review |
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